savantic semiconductor product specification silicon npn power transistors 2SD1762 d escription with to-220fa package low collector saturation voltage complement to type 2sb1185 applications for low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 50 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 3 a i cm collector current-peak 4.5 a p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1762 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma , i b =0 50 v v (br)cbo collector-base breakdown voltage i c =50a , i e =0 60 v v (br)ebo emitter-base breakdown voltage i e =50a , i c =0 5 v v cesat collector-emitter saturation voltage i c =2a ;i b =0.2a 1.0 v v besat base-emitter saturation voltage i c =2a ;i b =0.2a 1.5 v i cbo collector cut-off current v cb =40v i e =0 1 a i ebo emitter cut-off current v eb =4v; i c =0 1 a h fe dc current gain i c =0.5a ; v ce =3v 60 320 f t transition frequency i e =-0.5a ; v ce =5v;f=30mhz 90 mhz c ob output capacitance i e =0 ; v cb =10v ,f=1mhz 40 pf h fe classifications d e f 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon npn power transistors 2SD1762 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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